The hardness assurance wafer probe - hawp

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4345-4350

  King, E E ^a   Tettemer, G L ^a   Linderman, P B ^a   Micheletti, P E ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS;

EID: 0020880868     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333135     Document Type: Article

References (7)

1. E. E. King, B. Ahlport, G. Tettemer, K. Mulker, and P. Linderman, “Transient Radiation Screening of Silicon Devices Using Backside Laser Irradiation,” IEEE Trans. on Nuc. Sci., Vol. NS-29, No. 6, p. 1809, December 1982
2. L. J. Palkuti and J. J. LePage, “X-Ray Wafer Probe for Total Dose Testing,” IEEE Trans. on Nuc. Sci., Vol. NS-29, No. 6, p. 1832, December 1982
3. B. Ahlport, E. E. King, J. Russo, and D. M. Long, “Use of a Pinch Resistor for Neutron Hardness Assurance Screening of Bipolar Integrated Circuits,” IEEE Trans. on Nuc. Sci., Vol. NS-28, No. 6, p. 4318, December 1981
4. E. E. King, B. T. Ahlport, J. D. Russo, and D. M. Long, Radiation Hardness Assurance Techniques for Linear Integrated Circuits, Report No. AFWL-TR-82-21, Northrop Electronics Division, Air Force Weapons Laboratory, Kirtland Air Force Base, NM, February 1983
5. L. J. Palkuti, personal communication.
6. C. A. Goben, “A Study of the Neutron-Induced Base Current Component in Silicon Transistors,” IEEE Trans. on Nuc. Sci., Vol. NS-12, No. 5, p. 134, October 1965
7. C. M. Dozier and D. B. Brown, “The Use of Low Energy X-Rays for Device Testing - A Comparison with Co-60 Radiation,” presented at the IEEE Conf. on Nuclear and Space Radiation Effects, July 1983