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Volumn 35, Issue 6, 1988, Pages 1512-1516

Comparison of threshold transient upset levels induced by flash X-rays and pulsed lasers

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; LASER PULSES; X-RAYS;

EID: 0024168207     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25489     Document Type: Article
Times cited : (11)

References (12)
  • 1
    • 0021596157 scopus 로고
    • Transient Radiation Upset Simulations of CMOS Memory Circuits
    • L.W. Massengill and S.E. Diehl-Nagle, “Transient Radiation Upset Simulations of CMOS Memory Circuits”, IEEE Trans. Nucl. Sci., NS-31, 1337 (1984).
    • (1984) IEEE Trans. Nucl. Sci. , vol.NS-31 , pp. 1337
    • Massengill, L.W.1    Diehl-Nagle, S.E.2
  • 4
    • 70350581098 scopus 로고
    • The Transient Response of Resistors and Diodes to Ionizing Radiation
    • J.L. Wirth and S.C. Rogers, “The Transient Response of Resistors and Diodes to Ionizing Radiation”, IEEE Trans. Nucl. Sci., NS-11, 24 (1964).
    • (1964) IEEE Trans. Nucl. Sci. , vol.NS-11 , pp. 24
    • Wirth, J.L.1    Rogers, S.C.2
  • 6
    • 84939394983 scopus 로고
    • Automated Radiation Testing of IC's at the Wafer Level
    • L.J. Palkuti, “Automated Radiation Testing of IC's at the Wafer Level”, SEMICON 1984.
    • (1984) SEMICON
    • Palkuti, L.J.1
  • 7
    • 0002135544 scopus 로고
    • The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits
    • D.H. Habing, “The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits,” IEEE Trans. Nucl. Sci., NS-12, 91 (1965).
    • (1965) IEEE Trans. Nucl. Sci. , vol.NS-12 , pp. 91
    • Habing, D.H.1
  • 8
    • 0020252138 scopus 로고
    • Transient Radiation Screening of Silicon Devices using Backside Laser Irradiation
    • E.E. King, B. Ahlport, G. Tettemer, K. Mulker, and P. Linderman, “Transient Radiation Screening of Silicon Devices using Backside Laser Irradiation,” IEEE Trans. Nucl. Sci., NS-29, 1809 (1982).
    • (1982) IEEE Trans. Nucl. Sci. , vol.NS-29 , pp. 1809
    • King, E.E.1    Ahlport, B.2    Tettemer, G.3    Mulker, K.4    Linderman, P.5
  • 9
    • 0021596158 scopus 로고
    • Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor Devices
    • M.A. Hardman and A.R. Edwards, “Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor Devices,” IEEE Trans. Nucl. Sci., NS-31, 1406 (1984).
    • (1984) IEEE Trans. Nucl. Sci. , vol.NS-31 , pp. 1406
    • Hardman, M.A.1    Edwards, A.R.2
  • 10
    • 0018062077 scopus 로고
    • Use of a Pulsed Laser as an Aid To Transient Upset Testing of I2L LSI Microcircuits
    • T.D. Ellis and Y.D. Kim, “Use of a Pulsed Laser as an Aid To Transient Upset Testing of I2L LSI Microcircuits,” IEEE Trans. Nucl. Sci., NS-25, 1489 (1978).
    • (1978) IEEE Trans. Nucl. Sci. , vol.NS-25 , pp. 1489
    • Ellis, T.D.1    Kim, Y.D.2
  • 11
    • 84939376448 scopus 로고
    • Reducing Errors in Dosimetry simetry cause by Low Energy Components of CO-60 and Flash X-ray Sources
    • D.B. Brown and C.M. Dozier, “Reducing Errors in Dosimetry simetry cause by Low Energy Components of CO-60 and Flash X-ray Sources,” IEEE Trans. Nucl. Sci., NS-39, 1996 100(1982).
    • (1982) IEEE Trans. Nucl. Sci. , vol.NS-39 , Issue.1996 , pp. 100
    • Brown, D.B.1    Dozier, C.M.2
  • 12
    • 0003965863 scopus 로고
    • 68th Edition, page CRC Press Inc. Boca Raton, FI
    • CRC Handbook of Chemistry and Physics, 68th Edition, page B127, CRC Press Inc. Boca Raton, FI (1987).
    • (1987) CRC Handbook of Chemistry and Physics , pp. B127


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.