Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination

IEEE Transactions on Electron Devices

Volumn 43, Issue 7, 1996, Pages 1061-1065

  Schwänzen Berg, John W ^a   Nwankpa, Chika O ^a   Fischl, Robert ^a   Rosen, Arye ^a   Gilbert, Dean B ^a  

^a DREXEL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRODES; ION IMPLANTATION; LIGHTING; OPTICAL SWITCHES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR PLASMAS;

CONVENTIONAL REVERSE RECOVERY TECHNIQUE; ELECTRON BEAM EVAPORATION; OPTICAL ILLUMINATION; OPTICALLY CONTROLLED DIODES; STATIC VAR COMPENSATORS;

SEMICONDUCTOR DIODES;

EID: 0030195955     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502415     Document Type: Article

References (16)

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