Energy-gap reduction in heavily doped silicon: Causes and consequences

Solid State Electronics

Volumn 28, Issue 1-2, 1985, Pages 17-24

  Pantelides, Sokrates T ^a   Selloni, Annabella ^a   Car, Roberto ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE;

ELECTRON-ELECTRON INTERACTIONS; ELECTRON-IMPURITY INTERACTIONS; ENERGY-GAP REDUCTION; HEAVILY DOPED SILICON;

SEMICONDUCTING SILICON;

EID: 0021309317     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(85)90205-9     Document Type: Article

References (24)

1. Infrared Absorption in Heavily Doped n-Type Si
2. The temperature dependence of ideal gain in double diffused silicon transistors
3. Energy gap in Si and Ge: Impurity dependence