Test CMOS/SOS RAM for Transient Radiation Upset Comparative Research And Failure Analysis

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 2138-2142

  Nikiforov, A Y ^a   Poljakov, I V ^b  

^a Specialized Electronic Systems   (Russian Federation)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOSIMETRY; LASER BEAM EFFECTS; RANDOM ACCESS STORAGE; SILICON ON SAPPHIRE TECHNOLOGY; X RAYS;

MEMORY CELL; TRANSIENT RADIATION UPSET;

RADIATION EFFECTS;

EID: 0029491539     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489264     Document Type: Article

References (10)

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2. Radiation Hardened Product Databook, Space Products Operation, Harris Corporation, 1993, pp. 8. 13, 8. 36.
3. SOS Radiation Hard Hi-Rel IC and ASIC Handbook., GEC Plessey Semiconductors, 1995, pp. 461–581.
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6. R. Velazco, D. Bessot, S. Duzellier, R. Ecoffet, R. Koga, “Two CMOS Memory Cells Suitable for Design of SEU-Tolerant VLSI Circuits. “, IEEE Trans. Nucl. Sci., Vol. NS-41, No 6, December 1994, pp. 2229–2234.
7. The “RADON-5” Laser Simulator Manual Guide, SPELS, 1994.
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9. The “SSTS” Specialized Simulation Tests System Manual Guide, SPELS, 1995.
10. R. Marec, P. Mary, R. Ferrant, X. Fairbank, R. Gaillard, J-M. Palau, J. Gasiot, “A New Procedure for Static RAM Evaluation under X-ray Pulses. “, IEEE Trans. Nucl. Sci., Vol. NS-41, No 6, December 1994, pp. 2467–2473.