The Surface Generation Hump in Irradiated Power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2443-2451

  Anderson, S R ^a   Zupac, D ^b   Schrimpf, R D ^c   Galloway, K F ^c  

^a SEMATECH   (United States)

^b INTEL CORPORATION   (United States)

^c UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; GATES (TRANSISTOR); INTERFACES (MATERIALS); RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

CHARGE TRAPPING; INTERFACE TRAP DENSITY; POWER MOSFET DEVICES;

MOSFET DEVICES;

EID: 0028721239     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340600     Document Type: Article

References (15)

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