SCOPUS 정보 검색 플랫폼

Volumn 32, Issue 10, 1989, Pages 867-882

The development and application of a SiSiO2 interface-trap measurement system based on the staircase charge-pumping technique

(2) Chung, James E a Muller, Richard S a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTING SILICON--MEASUREMENTS; SEMICONDUCTOR DEVICES, MOSFET--MEASUREMENTS;

HOT ELECTRON DEGRADATION; INTERFACE-TRAP MEASUREMENT SYSTEM; N/P-CHANNEL MOSFET'S; RECOMBINATION TIME CONSTANTS; SILICON/SILICON DIOXIDE INTERFACE; STAIRCASE CHARGE-PUMPING TECHNIQUE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0024754462 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(89)90064-6 Document Type: Article

Times cited : (31)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.