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Volumn 1, Issue , 1995, Pages 255-258
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Determination of the surface states trap density in power VDMOSFETs using charge pumping technique
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC CURRENT MEASUREMENT;
ELECTRON EMISSION;
GATES (TRANSISTOR);
HOT CARRIERS;
INTERFACES (MATERIALS);
MATHEMATICAL MODELS;
POWER ELECTRONICS;
SEMICONDUCTING SILICON;
SILICA;
CHARGE PUMPING TECHNIQUE;
POWER VDMOSFETS;
SURFACE STATES TRAP DENSITY;
MOSFET DEVICES;
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EID: 0029492413
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (14)
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