Spectroscopic Charge Pumping: A New Procedure for Measuring Interface Trap Distributions on MOS Transistors

IEEE Transactions on Electron Devices

Volumn 38, Issue 8, 1991, Pages 1820-1831

  Heremans, Paul ^b   Groeseneken, Guido V ^a   Maes, Herman E ^a  

^a IMEC   (Belgium)

^b FUND FOR SCIENTIFIC RESEARCH   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

CHARGE PUMPING; MOS TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0026204013     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.119021     Document Type: Article

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