Profiling of stress induced interface states in short channel MOSFETs using a composite charge pumping technique

Solid State Electronics

Volumn 29, Issue 8, 1986, Pages 767-772

  Haddara, H ^a   Cristoloveanu, S ^a  

^a ENSERG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3843126455     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(86)90177-2     Document Type: Article

References (15)

1. A reliable approach to charge-pumping measurements in MOS transistors
2. Charge pumping in MOS devices
3. Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations
4. Conductance of MOS transistors in saturation
5. Analytical model and characterization of small geometry MOSFET's
6. Theory of the MOS transistor in weak inversion-new method to determine the number of surface states
7. Vieillissement des transistors MOS submicroniques après contrainte électrique