A simple technique for determining the interface-trap distribution of submicron metal-oxide-semiconductor transistors by the charge pumping method

Journal of Applied Physics

Volumn 65, Issue 3, 1989, Pages 1358-1360

  Hofmann, F ^a   Krautschneider, W H ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549103660     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.343034     Document Type: Review

References (5)