Use of charge-pumping for characterizing irradiated power MOSFETs

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1995, Pages 230-236

  Prevost, Gwenael ^a   Augier, Pascal ^a   Palau, Jean Marie ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); INTERFACES (MATERIALS); IRRADIATION; POWER ELECTRONICS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS;

CHARGE PUMPING MEASUREMENTS; IRRADIATED POWER MOSFETS; MEAN INTERFACE TRAP DENSITY; RADIATION INDUCED INTERFACE TRAPS;

MOSFET DEVICES;

EID: 0029454301     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)