Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 A, 1996, Pages

  Nötzel, Richard ^a   Ramsteiner, Manfred ^a   Menniger, Johann ^a   Trampert, Achim ^a   Schönherr, Hans Peter ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

MBE growth; Optical properties; Patterned substrates; Quantum wires

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THERMAL EFFECTS;

MICROPHOTOLUMINESCENCE SPECTROSCOPY; PATTERNED SUBSTRATES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030107882     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l297     Document Type: Article

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