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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1370-1374

Regular array formation of self-assembled InAs dots grown on patterned (111)B GaAs substrate by MBE

(3) Saitoh, Toshiya a Tanimura, Arata a Yoh, Kanji a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

(111)B GaAs substrate; InAs dot; MBE growth; Patterned substrate; Stranski Krastanow growth mode

Indexed keywords

EPITAXIAL GROWTH; ETCHING; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MONOLAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACES;

CONVENTIONAL OPTICAL LITHOGRAPHY PROCESS; PATTERNED SUBSTRATE; PERIODIC LATTICE STRAIN DISTRIBUTION; SHUTTER CONTROL; STRAIN EFFECT; STRANSKI-KRASTANOW GROWTH MODE; SUBSTRATE TEMPERATURE; SURFACE MIGRATION; WET CHEMICAL ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030080521 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1370 Document Type: Article

Times cited : (21)

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