Stacked InAs self-assembled quantum dots on (001) GaAs grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1320-1324

  Sugiyama, Yoshihiro ^b   Nakata, Yoshiaki ^b   Imamura, Kenichi ^b   Muto, Shunichi ^a   Yokoyama, Naoki ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

In segregation; InAs; Optical memory; Quantum dots; Vertical alignment

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH TEMPERATURE; OPTICAL MEMORY EFFECT; PHOTOCURRENT MEASUREMENT; VERTICAL ALIGNMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030080143     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1320     Document Type: Article

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