AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs islands active region grown by droplet epitaxy

Applied Physics Letters

Volumn 68, Issue 4, 1996, Pages 523-525

  Hasegawa, Y ^a   Egawa, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; FLOW OF FLUIDS; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS;

ALUMINUM GALLIUM ARSENIDE; ARSINE; DROPLET EPITAXY; LIGHT CURRENT CHARACTERISTICS; TRIMETHYLALUMINUM; TRIMETHYLGALLIUM;

LIGHT EMITTING DIODES;

EID: 0029733887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116387     Document Type: Article

References (12)

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