Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor

Journal of Applied Physics

Volumn 61, Issue 7, 1987, Pages 2663-2669

  Enquist, P M ^a   Ramberg, L P ^a   Eastman, L F ^a  

^a Department of Obstetrics Gynecology   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0001659547     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.337897     Document Type: Review

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