2.0 W CW X-Band GaInP/GaAs Heterojunction Bipolar Transistor

IEEE Microwave and Guided Wave Letters

Volumn 4, Issue 1, 1994, Pages 14-16

  Liu, William ^a   Kim, Tae ^a   Khatizbadeh, Ali ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; HETEROJUNCTIONS; POWER AMPLIFIERS; SEMICONDUCTOR DEVICES;

COLLECTOR EMITTER BIAS; CURRENT VOLTAGE CHARACTERISTICS; POWER ADDED EFFICIENCY;

BIPOLAR TRANSISTORS;

EID: 0028277180     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.267680     Document Type: Article

References (16)

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