Base and collector currents of pre- and post-burn-in AlGaAs/GaAs heterojunction bipolar transistors

Solid State Electronics

Volumn 37, Issue 7, 1994, Pages 1349-1352

  Liou, J J ^a   Huang, C I ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENT COLLECTORS; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; ELECTRON DEVICE TESTING; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

BASE CURRENTS; BURN IN TEST; COLLECTOR CURRENTS; EMPIRICAL MODEL; HETERO INTERFACES; HETEROJUNCTION BIPOLAR TRANSISTORS; RECOMBINATION CURRENTS; RECOMBINATION/THERMAL ENHANCED DEFECT DIFFUSION;

BIPOLAR TRANSISTORS;

EID: 0028474150     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90190-2     Document Type: Article

References (10)