Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors

Solid State Electronics

Volumn 35, Issue 7, 1992, Pages 891-895

  Liu, William ^a   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

CURRENT GAIN; EXTRINSIC BASE SURFACE RECOMBINATION CURRENT; LEDGE PARASITIC CONDUCTION CURRENT; PARASITIC CONDUCTION CURRENT; PASSIVATION LEDGE; THIN EMITTER LEDGE;

BIPOLAR TRANSISTORS;

EID: 0026896020     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90315-4     Document Type: Article

References (10)

1. Emitter-Base Junction Size Effect on Current GainHfeof AlGaAs/GaAs Heterojunction Bipolar Transistors
2. Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors
3. Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed