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Japanese Journal of Applied Physics

Volumn 30, Issue 12, 1991, Pages 3741-3743

Surface states for the gaas(ool) surfaces observed by photoemission yield spectroscopy

(4) Hirose, Kazuyuki a Noguchi, Takao b Uchiyama, Akihiko b Uda, Masayuki b

a NEC CORPORATION (Japan)

b WASEDA UNIVERSITY (Japan)

Author keywords

As decapping; GaAs(001); Interface states; MBE growth; Native oxide; Photoemission yield spectroscopy; Surface states

Indexed keywords

EID: 84956219269 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.30.3741 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.