Early-voltage degradation in heterostructure bipolar transistors due to interface states

Solid State Electronics

Volumn 38, Issue 1, 1995, Pages 131-133

  Mohajerzadeh, S ^a   Selvakumar, C R ^a   Noel, J P ^b   Houghton, D C ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC CHARGE; ELECTRIC CURRENT COLLECTORS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

EARLY VOLTAGE DEGRADATION; INTERFACE CHARGES; INTERFACE STATES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029209414     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)E0028-D     Document Type: Article

References (4)

1. The capacitance of p-n heterojunctions including the effects of interface states
2. Interface states in abrupt semiconductor heterojunction
3. Output conductance of bipolar transistors with large neutral-base recombination current
4. Study of Si/GeSi p-n heterostructures