Diode Ideality Factor for Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 39, Issue 12, 1992, Pages 2726-2732

  Liu, William ^a   Harris, James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; DIODE IDEALITY FACTOR; HETEROJUNCTION BIPOLAR TRANSISTORS; SURFACE RECOMBINATION CURRENT;

BIPOLAR TRANSISTORS;

EID: 0026966126     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.168749     Document Type: Article

References (19)

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