A temperature-dependent SOI MOSFET model for high-temperature application (27°C-300°C)

IEEE Transactions on Electron Devices

Volumn 38, Issue 9, 1991, Pages 2101-2111

  Jeon, Deok Su ^a   Burk, Dorothea E ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS; SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON INSULATOR TECHNOLOGY;

LONG-CHANNEL MOSFET; SOI MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026219658     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.83736     Document Type: Article

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