"Universal" effective mobility of empirical local mobility models for n- and p-channel silicon MOSFETs

Solid State Electronics

Volumn 36, Issue 2, 1993, Pages 179-188

  Wong, Hon Sum ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

DRIFT-DIFFUSION DEVICE SIMULATOR; EMPIRICAL LOCAL MOBILITY; N-CHANNEL SILICON MOSFETS; NON-LOCAL ELECTRIC FIELD MOBILITY MODEL; P-CHANNEL SILICON MOSFETS; UNIVERSAL EFFECTIVE MOBILITY; UNIVERSAL MOBILITY CURVE;

MOSFET DEVICES;

EID: 0027540858     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90137-F     Document Type: Article

References (31)

1. Proc. Symp. VSLI Technology
2. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
3. On the universality of inversion-layer mobility in n- and p-channel MOSFETs
4. A mobility model for carriers in the MOS inversion layer
5. The effect of channel implants on MOS transistor characterization
6. An improved method of MOSFET modeling and parameter extraction
7. Conf. Solid State Devices and Materials
8. Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer
9. Transconductance degradation in thin-Oxide MOSFET's
10. A new quantum mechanical channel mobility model for Si MOSFET's