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physica status solidi (a)

Volumn 113, Issue 1, 1989, Pages 223-240

Analytical modelling of the MOS transistor

(1) Ghibaudo, G a

a SFA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

CURRENT FLUCTUATION INTENSITY; DRAIN CURRENT; LOW TEMPERATURE PROPERTIES; NOISE SPECTRAL DENSITY; TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024663692 PISSN: 00318965 EISSN: 1521396X Source Type: Journal
DOI: 10.1002/pssa.2211130127 Document Type: Article

Times cited : (34)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.