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Volumn 113, Issue 1, 1989, Pages 223-240
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Analytical modelling of the MOS transistor
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SFA INC
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
TRANSISTORS;
CURRENT FLUCTUATION INTENSITY;
DRAIN CURRENT;
LOW TEMPERATURE PROPERTIES;
NOISE SPECTRAL DENSITY;
TRANSCONDUCTANCE;
SEMICONDUCTOR DEVICES, MOSFET;
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EID: 0024663692
PISSN: 00318965
EISSN: 1521396X
Source Type: Journal
DOI: 10.1002/pssa.2211130127 Document Type: Article |
Times cited : (34)
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References (35)
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