A simple parameter extraction method for ultra-thin oxide MOSFETs

Solid State Electronics

Volumn 38, Issue 6, 1995, Pages 1175-1177

  McLarty, P K ^a   Cristoloveanu, S ^b   Faynot, O ^c   Misra, V ^a   Hauser, J R ^a   Wortman, J J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b CNRS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000173028     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00248-E     Document Type: Article

References (9)

1. Experimental determination of short-channel MOSFET parameters
2. An improved method of MOSFET modeling and parameter extraction
3. An accurate large-signal MOS transistor model for use in computer-aided design