Generalized Mobility Law for Drain Current Modeling in Si MOS Transistors from Liquid Helium to Room Temperatures

IEEE Transactions on Electron Devices

Volumn 40, Issue 3, 1993, Pages 564-569

  Emrani, Ayoub ^a   Balestra, Francis ^a   Ghibaudo, Gerard ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

DRAIN CURRENT MODELING; GENERALIZED MOBILITY LAW; MOS TRANSITORS; SILICON TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0027558466     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199361     Document Type: Article

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