A Semi-Empirical Model of the MOSFET Inversion Layer Mobility for Low-Temperature Operation

IEEE Transactions on Electron Devices

Volumn 34, Issue 1, 1987, Pages 89-93

  Arora, Narain D ^a   Gildenblat, Gennady Sh ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS - LOW TEMPERATURE PHENOMENA;

EFFECTIVE NORMAL FIELD; INVERSION LAYER MOBILITY DEGRADATION; N- AND P-CHANNEL MODELS; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023090016     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22889     Document Type: Article

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