On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers

Solid State Electronics

Volumn 37, Issue 1, 1994, Pages 111-113

  Emrani, A ^a   Ghibaudo, G ^a   Balestra, F ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; VOLTAGE CONTROL;

DEPLETION CHARGE; HOLE EFFECTIVE MOBILITY; INVERSION CHARGE; MOS INVERSION LAYER; PARAMETER EXTRACTION; SUBSTRATE VOLTAGE DEPENDENCE;

MOSFET DEVICES;

EID: 0028196322     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90113-9     Document Type: Article

References (18)

1. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
2. IIIA-4 optimization of optical coupling characteristics between single-mode fibers and GaAs/GaAlAs strip-loaded waveguides
3. An improved method of MOSFET modeling and parameter extraction
4. A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation
5. Consideration of doping profiles in MOSFET mobility modeling
6. Proc. Low Temperature Electronic Device Operation Symp.
7. Proc. ESSDERC '92
8. Transport in the inversion layer of a MOS transistor: use of Kubo-Greenwood formalism