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Volumn 37, Issue 1, 1994, Pages 111-113
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On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
ELECTRIC FIELD EFFECTS;
ELECTRIC PROPERTIES;
ELECTRON TRANSPORT PROPERTIES;
GATES (TRANSISTOR);
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DOPING;
SUBSTRATES;
THERMAL EFFECTS;
VOLTAGE CONTROL;
DEPLETION CHARGE;
HOLE EFFECTIVE MOBILITY;
INVERSION CHARGE;
MOS INVERSION LAYER;
PARAMETER EXTRACTION;
SUBSTRATE VOLTAGE DEPENDENCE;
MOSFET DEVICES;
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EID: 0028196322
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(94)90113-9 Document Type: Article |
Times cited : (14)
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References (18)
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