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Volumn 37, Issue 1, 1994, Pages 111-113

On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; VOLTAGE CONTROL;

EID: 0028196322     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90113-9     Document Type: Article
Times cited : (14)

References (18)
  • 3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.