Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFETs

Solid State Electronics

Volumn 35, Issue 2, 1992, Pages 141-149

  Ouisse, Thierry ^a   Cristoloveanu, Sorin ^b   Borel, Gérard ^a  

^a Thomson TMS ^*  (France)

^b ENSERG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

RESISTORS--APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE--SILICON ON INSULATOR TECHNOLOGY; SEMICONDUCTOR DEVICES, MOSFET--RADIATION EFFECTS;

CHANNEL LENGTH; FULLY-DEPLETED SILICON-ON-INSULATOR MOSFET'S; INTERFACE COUPLING; SERIES RESISTANCE INFLUENCE; SHORT-CHANNEL SIMOX MOSFET'S; TRANSCONDUCTANCE VARIATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026818321     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90053-F     Document Type: Article

References (12)

1. Proc. 4th Int. Symp. on Silicon On Insulator Techn. and Devices
2. Proc. 4th Int. Symp. on Silicon On Insulator Techn. and Devices
3. Subthreshold slope in thin-film SOI MOSFETs