Hot-Carrier Induced Electron Mobility and Series Resistance Degradation in LDD NMOSFET's

IEEE Electron Device Letters

Volumn 15, Issue 12, 1994, Pages 499-501

  Pan, Y ^a   Ng, K K ^b   Wei, C C ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HOT CARRIERS; ION IMPLANTATION; OPTIMIZATION; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

CIRCUIT RELIABILITY SIMULATION; DRAIN ENGINEERING; HOT CARRIER INDUCED ELECTRON MOBILITY; SERIES RESISTANCE DEGRATION;

MOSFET DEVICES;

EID: 0028756531     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.338416     Document Type: Article

References (13)

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