Application of the Floating-Gate Technique to the Study of the n-MOSFET Gate Current Evolution Due to Hot-Carrier Aging

IEEE Electron Device Letters

Volumn 11, Issue 9, 1990, Pages 406-408

  Marchetaux, J C ^a   Bourcerie, M ^a   Boudou, Alain ^a   Vuillaume, D ^b  

^a BULL SA Direction des Techniques Avancées ^*  (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - HOT CARRIERS; STRESSES;

DC STRESSES; ELECTRON TRAPS; FLOATING GATE TECHNIQUE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025489076     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.62971     Document Type: Article

References (10)

1. P. Heremans, H. E. Maes, and N. Saks, “Evaluation of hot carrier degradation of n-channel MOSFET’s with the charge pumping technique,” IEEE Electron Device Lett., vol. EDL-7, p. 428, 1986.
2. M. G. Ancona, N. Saks, and D. McCarthy, “Lateral distribution of hot-carrier induced interface traps in MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, p. 2221, 1988.
3. P. Heremans, R. Bellens, G. Groseneken, and H. E. Maes, “Consistent model for the hot-carrier degradation in n-channel and p-chan-nel MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, p. 2194, 1988.
4. D. Vuillaume, J. C. Marchetaux, and A. Boudou, “Evidence of acceptor-like oxide defects created by hot-carrier injection in n-MOSFET’s: A charge pumping study,” submitted to IEEE Electron Device Lett.
5. F. H. Gaensslen and J. M. Aifken, “Sensitive technique for measuring small MOS gate currents,” IEEE Electron Device Lett., vol. EDL-1, p. 231, 1980.
6. N. S. Saks, P. L. Heremans, L. Van Den Hove, R. F. de Keersmaecker, and G. J. Declerck, “Observation of hot-hole injection in MOS transistor using a modified floating-gate technique,” IEEE Trans. Electron Devices, vol. ED-33, p. 1529, 1986.
7. M. Garrigues et al., “Two-dimensional computer simulation of hot carrier degradation in N.MOSFET’s,” in Proc. 18th ESSDERC (Montpellier, France), Sept. 1988, p. 673.
8. P. Lippens, private communication, 1989.
9. S. Tarn, P. K. Ko, and C. Hu, “Lucky electron model of channel hot-electron injection in MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-31, p. 1116, 1984.
10. B. S. Doyle, M. Bourcerie, J. C. Marchetaux, and A. Boudou, “The voltage dependence of degradation in N-MOS transistors,” in Proc. 17th ESSDERC (Bologna, Italy), Sept. 1987, p. 155.