Qualifying Commercial ICs for Space Total-Dose Environments

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 1869-1875

  Sexton, F W ^a   Fleetwood, D M ^a   Aldridge, C C ^a,b   Garret, G ^a,b   Pelletier, J C ^a   Gaona, J I ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Alliance Technologies Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005224623     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211380     Document Type: Article

References (14)

1. MIL-STD 883D Test Method 1019.4, issued January 1992 by the Defense Electronics Support Center, Dayton, OH.
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3. D. M. Fleetwood, P. S. Winokur, and T. L. Meisenheimer, “Hardness Assurance for Low-Dose Space Applications,” IEEE Trans. Nucl. Sci. NS-38, 1552 (1991).
4. G. F. Derbenwick and H. H. Sander, “CMOS Hardness Prediction for Low-Dose-Rate Environments,” IEEE Trans. Nucl. Sci. NS-24, 2244 (1977).
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9. D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “A Reevaluation of Worst-Case Post-Irradiation Response for Hardened MOS Transistors,” IEEE Trans. Nucl. Sci. NS-34, 1178 (1987).
10. D. M. Fleetwood, P. S. Winokur, and L. C. Riewe, “Predicting Switched-Bias Response from Steady-State Irradiations,” IEEE Trans. Nucl. Sci. NS-37, 1806 (1990).
11. E. Hamdy, J. McCollum, S. Chen. S. Chiang, S. Eltoukhy, J. Chang, T. Speers, and A. Mohsen, “Dielectric Based Antifuse for Logic and Memory ICs,” Digest of the Int'l Electron Devices Mtg, 786 (Dec 1988).
12. D. M. Fleetwood, “Radiation-Induced Charge Neutralization and Interface Trap Buildup in MOS Devices,” J. Appl. Phys. 67, 580 (1990).
13. N. R. Bray, Satellites International Limited, private communication.
14. David McCain, Texas Instruments, private communication.