Hardness assurance for low-dose space applications

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1552-1559

  Fleetwood, D M ^a   Winokur, P S ^a   Meisenheimer, T L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES; SEMICONDUCTOR DEVICES, MOS--SPACE APPLICATIONS;

GATE OXIDES; HARDNESS ASSURANCE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026367244     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124145     Document Type: Article

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