Accounting for time-dependent effects on CMOS total-dose response in space environments

Radiation Physics and Chemistry

Volumn 43, Issue 1-2, 1994, Pages 129-138

  Fleetwood, Daniel M ^a   Winokur, Peter S ^a   Barnes, Charles E ^b   Shaw, David C ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION; RADIATION EFFECTS; RADIATION HARDENING; SPACE APPLICATIONS;

TIME DEPENDENT EFFECTS;

CMOS INTEGRATED CIRCUITS;

ARTICLE; CONTROLLED STUDY; INSTRUMENTATION; PERFORMANCE; RADIATION EXPOSURE; RADIATION INJURY; SPACE FLIGHT;

EID: 0028158945     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0969-806X(94)90206-2     Document Type: Article

References (22)

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7. Predicting switched-bias response from steady-state irradiations
8. Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
9. An improved standard total dose test for CMOS space environments
10. High-temperature SOI electronics for space nuclear power systems: requirements and feasibility
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20. Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing
21. Post-irradiation effects in CMOS integrated circuits