Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 918-923

  McMorrow, Dale ^a   Weatherford, Todd R ^a   Knudson, Alvin R ^a   Buchner, Steve ^a   Melinger, Joseph S ^a   Tran, Lan Hu ^a   Campbell, A B ^a   Marshall, Paul W ^a   Dale, Cheryl J ^a   Peczalski, Andrej ^a   Baier, Steve ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

CHARGE COLLECTION CHARACTERISTICS; ION INDUCED SOFT ERRORS; SOFT ERROR RATE;

FIELD EFFECT TRANSISTORS;

EID: 0030164333     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510734     Document Type: Article

References (26)

1. T.R. Weatherford, L. Tran, W.J. Stapor, E. L. Peterson, J. B. Langworthy, D. McMorrow, W. G. Abdel-Kader, and P. J. McNulty, "Proton and Heavy Ion Upsets in GaAs MESFET Devices", IEEE Trans. Nucl. Sci. NS-38, 1450 (1991).
2. T.R. Weatherford, D. McMorrow, A.B. Campbell, and W. R. Curtice, "Significant Reduction in the Soft Error Susceptibility of GaAs Field-Effect Transistors with a Low-Temperature Grown GaAs buffer Layer", Appl. Phys. Lett. 67, 703 (1995).
3. D. McMorrow, T.R. Weatherford, W.R. Curtice, A. R. Knudson, S. Buchner, J. S. Melinger, L. H. Tran, and A. B. Campbell, "Elimination of Charge-Enhancement Effects in GaAs FETs with and LT GaAs Buffer Layer", IEEE Trans. Nucl. Sci. NS-42, 1837 (1995).
4. P.W. Marshall, C.J. Dale, T. R. Weatherford, M. Carts, D. McMorrow, A. Peczalski, S. Baier, J. Nohava, and J. Skogen, "Heavy Ion SEU Immunity of a GaAs Complementary HIGFET Circuit fabricated on a Low Temperature Grown Buffer Layer", IEEE Trans. Nucl. Sci. NS-42, 1850 (1995).
5. A.B. Campbell, A. Knudson, D. McMorrow, W. Anderson, J. Roussos, S. Espy, S. Buchner, K. Kang, D. Kerns, and S. Kerns, "Ion-Induced Charge Collection in GaAs MESFETs", IEEE Trans. Nucl. Sci. NS-36, 2292 (1989).
6. Y. Umemoto, N. Matsunaga, and K. Mitsusada, "A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits", IEEE Trans. Elect. Dev. ED-16, 864 (1989).
7. P. McNulty, A. Abdel-Kader, A. Campbell, A. Knudson, P. Shapiro, F. Eisen, and S. Roosild, "Charge Collection in GaAs Test Structures", IEEE Trans. Nucl. Sci. , NS-31, 1128 (1984).
8. (a) B.W. Hughlock, G.S. LaRue, and A. H. Johnston, "Single-Event Upset m GaAs E/D MESFET Logic", IEEE Trans. Nucl. Sci. NS-37, 1894 (1990); (b) B. W. Hughlock, T. Williams, A. H Johnston and R. E. Plaag, "Ion Induced Charge Collection in GaAs MESFETs and its Effect on SEU Vulnerability", IEEE Trans. Nucl. Sci. NS-38, 1442(1991).
9. J.R. Schwank, F.W. Sexton, T. R. Weatherford, D. McMorrow, A. R. Knudson, and J. S. Melinger, "Charge Collection in GaAs MESFETs Fabricated in Semi-Insulating Substrates", IEEE Trans. Nucl. Sci. NS-42, 1585 (1995).
10. (a) D. McMorrow, J.S. Melinger, A.R. Knudson, T. R. Weatherford, L. H. Tran, and W. R. Curtice, "Picosecond Charge-Collection Dynamics in GaAs MESFETs" IEEE Trans. Nucl. Sci. , NS-39, 1657 (1992);
11. (b) D. McMorrow, T. Weatherford, A.R. Knudson, L.H. Tran, J. S. Melinger, and A. B. Campbell, "Single-Event Dynamics of High-Performance HBTs and GaAs MESFETs", IEEE Trans. Nucl. Sci. NS-40, 1858 (1993).
12. D. McMorrow, J.S. Melinger, N. Thantu, A.B. Campbell, T. R. Weatherford, A. R. Knudson, L. H. Tran, and A. Peczalski, "Charge Collection Mechanisms of Heterostructure FETs", IEEE Trans. Nucl. Sci. , NS-41, 2055 (1994).
13. T.R. Weatherford, D. McMorrow, W.R. Curtice, A. R. Knudson, and A. B. Campbell, "Single Event Induced Charge Transport Modeling of GaAs MESFETs" IEEE Trans. Nucl. Sci. NS-40, 1867 (1993).
14. F.W. Smith, A.R. Calawa, C. L. Chen, M. J. Manfra, and L. J. Mahoney, "New MBE Buffer Used to Eliminate Backgating in GaAs MESFETs", IEEE Elect. Dev. Lett. EDL-9, 77 (1988).
15. C.L. Chen, F.W. Smith, A. R. Calawa, L. J. Mahoney, and M. J. Manfra, IEEE Trans. Elect. Dev. , "Reduction of Sidegating in GaAs Analog and Digital Circuits Using a New Buffer Layer", ED-36, 1546 (1989).
16. S. Gupta, J. Pamulapati, J. Chwalek, P.K. Bhattacharya, and G. Mourou, "Subpicosecond Photoconductivity in III-V Compound Semiconductors Using Low Temperature MBE Growth Techniques", in Ultrafast Phenomena VIII, Berlin: Springer-Verlag, 1990, pp. 297-299.
17. M. Kaminska, Z. Liliental-Weber, E.R. Weber, T. George, J.B. Kortright, F. W. Smith, B-Y. Tsaur, and A. R. Calawa, "Structural Properties of As-Rich GaAs Grown by Molecular Beam Epitaxy at Low Temperatures", Appl. Phys. Lett. 54, 1881 (1989).
18. X.Q. Zhou, H.M. van Driel, W. W. Ruhle, Z. Gogolak, and K Ploog, "Femtosecond Carrier Kinetics in Low-Temperature-Grown GaAs", Appl. Phys. Lett. 61, 3020 (1990).
19. A. Krotkus, T. Viselga, K Bertulis, V. Jasutis, S. Marcinkevicius, and U. Olin, "Subpicosecond Carrier Lifetimes in GaAs Grown by Molecular Beam Epitaxy at Low Substrate Temperatures", Appl. Phys. Lett. 66, 1939 (1995).
20. G.R. Witt, "Prospects of LT GaAs for Device Applications", in Semi-insulating III-V Materials, Singapore: World Scientific, 1994, pp. 297-304.
21. M.R. Melloch, N. Otsuka, J.M. Woodall, A. C. Warren, and J. L. Freeouf, "Formation of Arsenic Precipitates in GaAs Buffer Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperatures", Appl. Phys. Lett. 57, 1531 (1990).
22. A.R. Knudson and A.B. Campbell, "Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits", IEEE Trans. Nucl. Sci. NS-28 4017 (1981).
23. D. McMorrow, A.R. Knudson, and A.B. Campbell, IEEE Trans. Nucl. Sci NS-37, 1902 (1990).
24. D. McMorrow, A.B. Campbell, A.R. Knudson, and T. R. Weatherford, "Picosecond Radiation-Induced Current Transients in digital GaAs MESFETs", in OSA Proceedings on Picosecond Electronics and Optoelectronics, Washington, DC:Optical Society of America, 1991, pp. 119-125.
25. J. Cutchin, P. Marshall, T.R. Weatherford, J. Langworthy, E.L. Petersen, A. B. Campbell, S. Hanka, and A. Peczalski, "Heavy Ion and Proton Analysis of a C-HIGFET SRAM," IEEE Trans. Nucl. Sci. , NS-40, 1660 (1993).
26. P.W. Marshall, C.J. Dale, M. LaMacchia and K. A. LaBel, "Particle-Induced Mitigation of SEU Sensitivity in High Data Rate GaAs HIGFET Technologies", IEEE Trans. Nucl. Sci. NS-42, 1844 (1995).