Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

Applied Physics Letters

Volumn , Issue , 1995, Pages 1939-

  Krotkus, A ^a   Viselga, R ^a   Bertulis, K ^a   Jasutis, V ^a   Marcinkevicius S ^a,b   Olin, U ^c  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c ACREO AB   (Sweden)

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EID: 36449004463     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.113283     Document Type: Article

References (6)