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Applied Physics Letters

Volumn 54, Issue 19, 1989, Pages 1881-1883

Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

(8) Kaminska, M a Liliental Weber, Z a Weber, E R a George, T a Kortright, J B b Smith, F W c Tsaur, B Y c Calawa, A R c

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544438546 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.101229 Document Type: Article

Times cited : (345)

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