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Volumn 7, Issue 2, 1986, Pages 112-114

Microwave Properties of Self-Aligned GaAs/AlGaAs Heterojunction Bipolar Transistors on Silicon Substrates

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; SUBSTRATES;

EID: 0022667731     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26311     Document Type: Article
Times cited : (21)

References (13)
  • 2
    • 0039570175 scopus 로고
    • Metal semiconductor field effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
    • G. M. Metze, H. K. Choi, and B.-Y. Tsaur, “Metal semiconductor field effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy,” Appl. Phys. Lett., vol. 45, pp. 1107–1109, 1984.
    • (1984) Appl. Phys. Lett. , vol.45 , pp. 1107-1109
    • Metze, G.M.1    Choi, H.K.2    Tsaur, B.Y.3
  • 3
    • 36549096171 scopus 로고
    • Molecular beam epitaxial growth of GaAs on Si (211)
    • P. N. Uppal and H. Kroemer, “Molecular beam epitaxial growth of GaAs on Si (211),” J. Appl, Phys., vol. 58, pp. 2195–2203, 1985.
    • (1985) J. Appl, Phys. , vol.58 , pp. 2195-2203
    • Uppal, P.N.1    Kroemer, H.2
  • 4
    • 0021696245 scopus 로고
    • Fabrication of GaAs MESFET ring oscillators on MOCVD grown GaAs/Si (100) substrate
    • T. Nonaka, M. Akiyama, Y. Kawarada, and K. Kaminski, “Fabrication of GaAs MESFET ring oscillators on MOCVD grown GaAs/Si (100) substrate,” Japan J. Appl. Phys., vol. 23, pp. L919–L921, 1984.
    • (1984) Japan J. Appl. Phys. , vol.23 , pp. L919-L921
    • Nonaka, T.1    Akiyama, M.2    Kawarada, Y.3    Kaminski, K.4
  • 6
    • 0001417444 scopus 로고
    • GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
    • R. Fischer, N. Chand, W. Kopp, H. Morkoç, L. P. Erickson, and R. Youngman, “GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy,” Appl Phys. Lett., vol. 47, pp. 397–399, 1985.
    • (1985) Appl Phys. Lett. , vol.47 , pp. 397-399
    • Fischer, R.1    Chand, N.2    Kopp, W.3    Morkoç, H.4    Erickson, L.P.5    Youngman, R.6
  • 9
    • 0021444928 scopus 로고
    • Molecular beam epitaxial growth and materials properties of GaAs and AlGaAs on Si(100)
    • W. I. Wang, “Molecular beam epitaxial growth and materials properties of GaAs and AlGaAs on Si(100),” Appl Phys. Lett., vol. 44, pp. 1149–1151, 1984.
    • (1984) Appl Phys. Lett. , vol.44 , pp. 1149-1151
    • Wang, W.I.1
  • 11
    • 84941508607 scopus 로고    scopus 로고
    • N. Otsuka, C. Choi, R, Fischer, and H. Morkoç, unpublished
    • N. Otsuka, C. Choi, R, Fischer, and H. Morkoç, unpublished.
  • 13
    • 0021640187 scopus 로고
    • GaAs/AlGaAs heterojunction bipolar transistors with very low base sheet resistances
    • S. Kofol, N. Moll, E. Gowen, and J. Miller, “GaAs/AlGaAs heterojunction bipolar transistors with very low base sheet resistances,” in IEDM Tech. Dig., 1984, pp. 198–200.
    • (1984) IEDM Tech. Dig. , pp. 198-200
    • Kofol, S.1    Moll, N.2    Gowen, E.3    Miller, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.