-
1
-
-
0021504716
-
Characterization of GaAs/AlGaAs MODFET's grown directly on (100) silicon
-
R. Fischer, T. Henderson, J. Klem, W. T. Masselink, W. Kopp, H. Morkoç, and C. W. Litton, “Characterization of GaAs/AlGaAs MODFET's grown directly on (100) silicon,” Electron. Lett., vol. 20, pp. 945–947, 1984.
-
(1984)
Electron. Lett.
, vol.20
, pp. 945-947
-
-
Fischer, R.1
Henderson, T.2
Klem, J.3
Masselink, W.T.4
Kopp, W.5
Morkoç, H.6
Litton, C.W.7
-
2
-
-
0039570175
-
Metal semiconductor field effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
-
G. M. Metze, H. K. Choi, and B.-Y. Tsaur, “Metal semiconductor field effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy,” Appl. Phys. Lett., vol. 45, pp. 1107–1109, 1984.
-
(1984)
Appl. Phys. Lett.
, vol.45
, pp. 1107-1109
-
-
Metze, G.M.1
Choi, H.K.2
Tsaur, B.Y.3
-
3
-
-
36549096171
-
Molecular beam epitaxial growth of GaAs on Si (211)
-
P. N. Uppal and H. Kroemer, “Molecular beam epitaxial growth of GaAs on Si (211),” J. Appl, Phys., vol. 58, pp. 2195–2203, 1985.
-
(1985)
J. Appl, Phys.
, vol.58
, pp. 2195-2203
-
-
Uppal, P.N.1
Kroemer, H.2
-
4
-
-
0021696245
-
Fabrication of GaAs MESFET ring oscillators on MOCVD grown GaAs/Si (100) substrate
-
T. Nonaka, M. Akiyama, Y. Kawarada, and K. Kaminski, “Fabrication of GaAs MESFET ring oscillators on MOCVD grown GaAs/Si (100) substrate,” Japan J. Appl. Phys., vol. 23, pp. L919–L921, 1984.
-
(1984)
Japan J. Appl. Phys.
, vol.23
, pp. L919-L921
-
-
Nonaka, T.1
Akiyama, M.2
Kawarada, Y.3
Kaminski, K.4
-
5
-
-
0022665583
-
A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates
-
Feb.
-
R. Fischer, N. Chand, W. Kopp, C. K. Peng, H. Morkoç, K. R. Gleason, and D. Scheitlin, “A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates,” IEEE Trans. Electron Devices, vol. ED-33, pp. 206–213, Feb. 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 206-213
-
-
Fischer, R.1
Chand, N.2
Kopp, W.3
Peng, C.K.4
Morkoç, H.5
Gleason, K.R.6
Scheitlin, D.7
-
6
-
-
0001417444
-
GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
-
R. Fischer, N. Chand, W. Kopp, H. Morkoç, L. P. Erickson, and R. Youngman, “GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy,” Appl Phys. Lett., vol. 47, pp. 397–399, 1985.
-
(1985)
Appl Phys. Lett.
, vol.47
, pp. 397-399
-
-
Fischer, R.1
Chand, N.2
Kopp, W.3
Morkoç, H.4
Erickson, L.P.5
Youngman, R.6
-
7
-
-
0021640357
-
Microwave performance of GaAs/ (Al,Ga)As heterojunction bipolar transistors
-
P. M. Asbeck, A. K. Gapta, F, J. Ryan, D. L. Miller, R. J. Anderson, C. A. Liechti, and F. H. Eisen, “Microwave performance of GaAs/ (Al,Ga)As heterojunction bipolar transistors,” in IEDM Tech. Dig., 1984, pp. 864–865.
-
(1984)
IEDM Tech. Dig.
, pp. 864-865
-
-
Asbeck, P.M.1
Gapta, A.K.2
Ryan, F.J.3
Miller, D.L.4
Anderson, R.J.5
Liechti, C.A.6
Eisen, F.H.7
-
8
-
-
0000015076
-
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
-
R. Fischer, W. T. Masselink, J. Klem, T. Henderson, T. C. McGlinn, M. V. Klein, H. Morkoç, J. H. Mazur, and J. Washburn, “Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy,” J. Appl Phys., vol. 58, pp. 374–381, 1985.
-
(1985)
J. Appl Phys.
, vol.58
, pp. 374-381
-
-
Fischer, R.1
Masselink, W.T.2
Klem, J.3
Henderson, T.4
McGlinn, T.C.5
Klein, M.V.6
Morkoç, H.7
Mazur, J.H.8
Washburn, J.9
-
9
-
-
0021444928
-
Molecular beam epitaxial growth and materials properties of GaAs and AlGaAs on Si(100)
-
W. I. Wang, “Molecular beam epitaxial growth and materials properties of GaAs and AlGaAs on Si(100),” Appl Phys. Lett., vol. 44, pp. 1149–1151, 1984.
-
(1984)
Appl Phys. Lett.
, vol.44
, pp. 1149-1151
-
-
Wang, W.I.1
-
10
-
-
84941491424
-
Structural properties of GaAs on Si and Ge substrates
-
presented at the 6th MBE Workshop, to be published in JVST B
-
D. A. Neumann, X. Zhu, H. Zabel, T. Henderson, R. Fischer, W. T. Masselink, J. Klem, C. K. Peng, and H. Morkoç, “Structural properties of GaAs on Si and Ge substrates,” presented at the 6th MBE Workshop, to be published in JVST B.
-
-
-
Neumann, D.A.1
Zhu, X.2
Zabel, H.3
Henderson, T.4
Fischer, R.5
Masselink, W.T.6
Klem, J.7
Peng, C.K.8
Morkoç, H.9
-
11
-
-
84941508607
-
-
N. Otsuka, C. Choi, R, Fischer, and H. Morkoç, unpublished
-
N. Otsuka, C. Choi, R, Fischer, and H. Morkoç, unpublished.
-
-
-
-
12
-
-
0022325128
-
GaAs/AlGaAs heterojunction bipolar transistors on Si substrates
-
R. Fischer, J. Klem, J. S. Gedymin, T. Henderson, W, Kopp, and H. Morkoç, “GaAs/AlGaAs heterojunction bipolar transistors on Si substrates,” in IEDM Tech. Dig., 1985, pp. 332–335.
-
(1985)
IEDM Tech. Dig.
, pp. 332-335
-
-
Fischer, R.1
Klem, J.2
Gedymin, J.S.3
Henderson, T.4
Kopp, W.5
Morkoç, H.6
-
13
-
-
0021640187
-
GaAs/AlGaAs heterojunction bipolar transistors with very low base sheet resistances
-
S. Kofol, N. Moll, E. Gowen, and J. Miller, “GaAs/AlGaAs heterojunction bipolar transistors with very low base sheet resistances,” in IEDM Tech. Dig., 1984, pp. 198–200.
-
(1984)
IEDM Tech. Dig.
, pp. 198-200
-
-
Kofol, S.1
Moll, N.2
Gowen, E.3
Miller, J.4
|