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Volumn 10, Issue 12, 1989, Pages 559-561

High-Performance AlGaAs/GaAs SDHT’s and Ring Oscillators Grown by MBE on Si Substrates

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES;

EID: 0024939424     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.43139     Document Type: Article
Times cited : (6)

References (11)
  • 1
    • 3242734900 scopus 로고
    • Room temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate
    • T. H. Windhorn and G. M. Metze, “Room temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate,” Appl. Phys. Lett., vol. 47, p. 1031, 1985.
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 1031
    • Windhorn, T.H.1    Metze, G.M.2
  • 2
    • 0023345114 scopus 로고
    • Ion-implantation and activation behavior of Si in MBE-grown GaAs on Si substrates for GaAs MESFETs
    • N. Chand, F. Ren, S. J. Pearton, N. J. Shah, and A. Y. Cho, “Ion-implantation and activation behavior of Si in MBE-grown GaAs on Si substrates for GaAs MESFET’s,” IEEE Electron Device Lett., vol. EDL-8, p. 185, 1987.
    • (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 185
    • Chand, N.1    Ren, F.2    Pearton, S.J.3    Shah, N.J.4    Cho, A.Y.5
  • 3
    • 0001417444 scopus 로고
    • GaAs bipolar transistors grown on (100) SiO substrates by molecular beam epitaxy
    • R. Fisher et al., “GaAs bipolar transistors grown on (100) SiO substrates by molecular beam epitaxy,” Appl. Phys. Lett., vol. 47, p. 397, 1985.
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 397
    • Fisher, R.1
  • 4
    • 0042527071 scopus 로고
    • GaAs avalanche photodiodes and the effect of rapid thermals annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxy
    • N. Chand et al., “GaAs avalanche photodiodes and the effect of rapid thermals annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxy,” J. Vac, Sci. Technol. B, p. 822, 1987.
    • (1987) J. Vac, Sci. Technol. B , pp. 822
    • Chand, N.1
  • 5
    • 3943064255 scopus 로고
    • Performance of quarter micron GaAs metal-semiconductor field-effect transistor on Si substrates
    • M. I. Aksun et al., “Performance of quarter micron GaAs metal-semiconductor field-effect transistor on Si substrates,” Appl. Phys. Lett., vol. 49, p. 1654, 1986.
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 1654
    • Aksun, M.I.1
  • 6
    • 0024277847 scopus 로고
    • GaAs MESFETs ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates
    • F. Ren, N. Chand, S. J. Pearton, and C. S. Wu, “GaAs MESFET’s ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates,” Electron. Lett., vol. 24, p. 1037, 1988.
    • (1988) Electron. Lett. , vol.24 , pp. 1037
    • Ren, F.1    Chand, N.2    Pearton, S.J.3    Wu, C.S.4
  • 8
    • 0021504716 scopus 로고
    • Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
    • R. J. Fisher et al., “Characteristics of GaAs/AlGaAs MODFET’s grown directly on (100) silicon,” Electron. Lett., vol. 20, p. 945, 1984.
    • (1984) Electron. Lett. , vol.20 , pp. 945
    • Fisher, R.J.1
  • 9
    • 84913929175 scopus 로고
    • Properties of MODFETs grown on Si substrates at dc and microwave frequencies
    • R. J. Fisher, W. F. Kopp, J. S. Gedymin, and H. Morkoç, “Properties of MODFET’s grown on Si substrates at dc and microwave frequencies,” IEEE Trans. Electron Devices, vol. ED-33, p. 1407, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1407
    • Fisher, R.J.1    Kopp, W.F.2    Gedymin, J.S.3    Morko, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.