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Volumn 28, Issue 11 A, 1989, Pages L1896-L1898

12 GHz high power gaas/si mesfets

Author keywords

GaAs Si; MBE; MEE; Mesfet; Surface Morphology

Indexed keywords

HEAT TREATMENT--ANNEALING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE--GROWTH; SEMICONDUCTING SILICON--SUBSTRATES;

EID: 0024771561     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.L1896     Document Type: Article
Times cited : (12)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.