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Volumn 28, Issue 11 A, 1989, Pages L1896-L1898
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12 GHz high power gaas/si mesfets
a a a a a,b a,b a a,b |
Author keywords
GaAs Si; MBE; MEE; Mesfet; Surface Morphology
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Indexed keywords
HEAT TREATMENT--ANNEALING;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE--GROWTH;
SEMICONDUCTING SILICON--SUBSTRATES;
MESFETS;
POWER SEMICONDUCTOR DEVICES;
TRANSISTORS, FIELD EFFECT;
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EID: 0024771561
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.28.L1896 Document Type: Article |
Times cited : (12)
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References (11)
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