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Volumn 33, Issue 2, 1986, Pages 206-213

A dc and Microwave Comparison of GaAs MESFET's on GaAs and Si Substrates

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - GROWTH; SILICON AND ALLOYS - SUBSTRATES; TRANSISTORS, FIELD EFFECT - FABRICATION;

EID: 0022665583     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22467     Document Type: Article
Times cited : (37)

References (20)
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  • 5
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    • GaAs light emitting diodes fabricated on Ge-coated Si substrates
    • R. M. Fletcher, D. K. Wagner, and J. M. Ballantyne, “GaAs light emitting diodes fabricated on Ge-coated Si substrates,” Appl. Phys. Lett., vol. 45, pp. 535–536, 1984.
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  • 7
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    • Fabrication of GaAs MESFET ring oscillator on MOCVD grown GaAs/Si (100) substrate
    • T. Nonaka, M. Akiyama, Y. Kawarada, and K. Kaminiski, “Fabrication of GaAs MESFET ring oscillator on MOCVD grown GaAs/Si (100) substrate,” Japan. J. Appl. Phys., vol. 23, pp. L919-L921, 1984.
    • (1984) Japan. J. Appl. Phys , vol.23 , pp. 1919-1921
    • Nonaka, T.1    Akiyama, M.2    Kawarada, Y.3    Kaminiski, K.4
  • 8
    • 0039570175 scopus 로고
    • Metal-semiconductor field effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
    • G. M. Metze, H. K. Choi, and B.-Y. Tsaur, “Metal-semiconductor field effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy,” Appl. Phys. Lett., vol. 45, pp. 1109-1110, 1984.
    • (1984) Appl. Phys. Lett , vol.45 , pp. 1109-1110
    • Metze, G.M.1    Choi, H.K.2    Tsaur, B.-Y.3
  • 10
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    • GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
    • R. Fischer, N. Chand, W. Kopp, H. Morkoç, L. P. Erickson, and R. Youngman, “GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy,” Appl. Phys. Lett., vol. 47, pp. 397–399, 1985.
    • (1985) Appl. Phys. Lett , vol.47 , pp. 397-399
    • Fischer, R.1    Chand, N.2    Kopp, W.3    Morkoç, H.4    Erickson, L.P.5    Youngman, R.6
  • 13
    • 0001632368 scopus 로고
    • LEED study of the stepped surface of vicinal Si (100)
    • R. Kaplan, “LEED study of the stepped surface of vicinal Si (100),” Surf. Sci., vol. 93, pp. 145–158, 1980.
    • (1980) Surf. Sci , vol.93 , pp. 145-158
    • Kaplan, R.1
  • 14
    • 0006476319 scopus 로고
    • LPE growth on structural (100) InP substrates and their fabrication by preferential etching
    • S. E. H. Turly and P. D. Greene, “LPE growth on structural (100) InP substrates and their fabrication by preferential etching,” J. Cryst. Growth, vol. 58, pp. 409–416, 1982.
    • (1982) J. Cryst. Growth , vol.58 , pp. 409-416
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  • 15
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    • A study of high-speed normally off and normally on Al0.5Ga0.5 As heterojunction gate GaAs FET's (HJFET)
    • H. Morkoç, S. G. Bandy, R. Sankaran, G. A. Antypas, and R. L. Bell, “A study of high-speed normally off and normally on Al0.5Ga0.5 As heterojunction gate GaAs FET's (HJFET),” IEEE Trans. Electron Devices, vol. ED-25, 619–627, 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 619-627
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  • 16
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  • 17
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    • The effect of backgating on the design and performance of GaAs digital integrated circuits
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  • 18
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  • 20
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    • ltoh, T.1    Yanai, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.