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Volumn 32, Issue 12 R, 1993, Pages 5508-5513

Thermal resistance and electronic characteristics for high electron mobility transistors grown on si and gaas substrates by metal-organic chemical vapor deposition

Author keywords

Current gain cutoff trequency (fT); High electron mobility transistors (HEMTs); Metal organic chemical vapor deposition (MOCVD); S parameter; Thermal resistance

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; GATES (TRANSISTOR); HEAT RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES;

EID: 0027850489     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.5508     Document Type: Article
Times cited : (7)

References (23)
  • 22
    • 84956185470 scopus 로고    scopus 로고
    • (Semiconductor lasers and Its Applications) (Kogakusha, Tokyo), in Japanese
    • H. Yonezu: Handotai Reza to Oyo Gijutsu (Semiconductor lasers and Its Applications) (Kogakusha, Tokyo) p. 200 [in Japanese].
    • Handotai Reza to Oyo Gijutsu
    • Yonezu, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.