-
1
-
-
0021504716
-
Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
-
Fischer, R., Henderson, T., Klem, J., Masselink, W. T., Kopp, W., Morkoç, H., and Litton, C. W.: ‘Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon’, Electron. Lett., 1984, 20, pp. 945–947
-
(1984)
Electron. Lett.
, vol.20
, pp. 945-947
-
-
Fischer, R.1
Henderson, T.2
Klem, J.3
Masselink, W.T.4
Kopp, W.5
Morkoç, H.6
Litton, C.W.7
-
2
-
-
0021696245
-
Fabrication of GaAs MESFET ring oscillator on MOCVD grown GaAs/Si (100) substrate
-
Nonaka, T., Akiyama, M., Kawarada, Y., and Kaminisi, K.: ‘Fabrication of GaAs MESFET ring oscillator on MOCVD grown GaAs/Si (100) substrate’, Jpn. J. Appl. Phys., 1984, 23, pp. L919–L921
-
(1984)
Jpn. J. Appl. Phys.
, vol.23
, pp. L919-L921
-
-
Nonaka, T.1
Akiyama, M.2
Kawarada, Y.3
Kaminisi, K.4
-
3
-
-
84913929175
-
Properties of MODFET’s grown on Si substrates at DC and microwave frequencies
-
Fischer, R. J., Kopp, W. F., Gedymin, J. S., and Morkoç, H.: ‘Properties of MODFET’s grown on Si substrates at DC and microwave frequencies’, IEEE Trans., 1986, ED-33, pp. 1407–1412
-
(1986)
IEEE Trans.
, vol.ED-33
, pp. 1407-1412
-
-
Fischer, R.J.1
Kopp, W.F.2
Gedymin, J.S.3
Morkoç, H.4
-
4
-
-
3943064255
-
Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates
-
Aksun, M.I., Morkoç, H., Lester, L. F., Duh, K. H. G., Smith, P. M., Chao, P. C., Longerbone, M., and Erickson, L. P.: ‘Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates’, Appl. Phys. Lett., 1986, 49, pp. 1654–1655
-
(1986)
Appl. Phys. Lett.
, vol.49
, pp. 1654-1655
-
-
Aksun, M.L.1
Morkoç, H.2
Lester, L.F.3
Duh, K.H.G.4
Smith, P.M.5
Chao, P.C.6
Longerbone, M.7
Erickson, L.P.8
-
5
-
-
0024771561
-
12 GHz high power GaAs/Si MESFETs
-
Charasse, M. N., Bartenlian, B., Gerard, B., Hirtz, J.P., laViron, M., de Parscau, A. M., Derevonko, M., and Delagebeaudeuf, D.: ‘12 GHz high power GaAs/Si MESFETs’, Jpn. J. Appi Phys., 1989, 28, pp. L1896–L1898
-
(1989)
Jpn. J. Appi Phys.
, vol.28
, pp. L1896-L1898
-
-
Charasse, M.N.1
Bartenlian, B.2
Gerard, B.3
Hirtz, J.P.4
laViron, M.5
de Parscau, A.M.6
Derevonko, M.7
Delagebeaudeuf, D.8
-
6
-
-
0022892147
-
Growth of GaAs/Si and its application to FETs and LEDs
-
Akiyama, M., Kawarada, Y., Nishi, S., Ueda, T., and Kaminishi, K.: ‘Growth of GaAs/Si and its application to FETs and LEDs’. MRS Symposium, 1986, pp. 53–64
-
(1986)
MRS Symposium
, pp. 53-64
-
-
Akiyama, M.1
Kawarada, Y.2
Nishi, S.3
Ueda, T.4
Kaminishi, K.5
-
7
-
-
0013407667
-
Growth of high quality GaAs layers on Si substrates by MOCVD
-
Akiyama, M., Kawarada, Y., Ueda, T., Nishi, S., and Kaminishi, K.: ‘Growth of high quality GaAs layers on Si substrates by MOCVD’, J. Cryst. Growth, 1986, 77, pp. 490–497
-
(1986)
J. Cryst. Growth
, vol.77
, pp. 490-497
-
-
Akiyama, M.1
Kawarada, Y.2
Ueda, T.3
Nishi, S.4
Kaminishi, K.5
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