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Volumn 28, Issue 18, 1992, Pages 1737-1738

Comparison of electronic characteristics and thermal resistance for HEMTs grown on GaAs and Si substrates

Author keywords

Semiconductor devices and materials; Transistors

Indexed keywords

HEMT; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL CONDUCTIVITY;

EID: 0026909944     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19921104     Document Type: Article
Times cited : (7)

References (7)
  • 2
    • 0021696245 scopus 로고
    • Fabrication of GaAs MESFET ring oscillator on MOCVD grown GaAs/Si (100) substrate
    • Nonaka, T., Akiyama, M., Kawarada, Y., and Kaminisi, K.: ‘Fabrication of GaAs MESFET ring oscillator on MOCVD grown GaAs/Si (100) substrate’, Jpn. J. Appl. Phys., 1984, 23, pp. L919–L921
    • (1984) Jpn. J. Appl. Phys. , vol.23 , pp. L919-L921
    • Nonaka, T.1    Akiyama, M.2    Kawarada, Y.3    Kaminisi, K.4
  • 3
    • 84913929175 scopus 로고
    • Properties of MODFET’s grown on Si substrates at DC and microwave frequencies
    • Fischer, R. J., Kopp, W. F., Gedymin, J. S., and Morkoç, H.: ‘Properties of MODFET’s grown on Si substrates at DC and microwave frequencies’, IEEE Trans., 1986, ED-33, pp. 1407–1412
    • (1986) IEEE Trans. , vol.ED-33 , pp. 1407-1412
    • Fischer, R.J.1    Kopp, W.F.2    Gedymin, J.S.3    Morkoç, H.4
  • 7
    • 0013407667 scopus 로고
    • Growth of high quality GaAs layers on Si substrates by MOCVD
    • Akiyama, M., Kawarada, Y., Ueda, T., Nishi, S., and Kaminishi, K.: ‘Growth of high quality GaAs layers on Si substrates by MOCVD’, J. Cryst. Growth, 1986, 77, pp. 490–497
    • (1986) J. Cryst. Growth , vol.77 , pp. 490-497
    • Akiyama, M.1    Kawarada, Y.2    Ueda, T.3    Nishi, S.4    Kaminishi, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.