New Method to Measure the Source and Drain Resistance of the GaAs MESFET

IEEE Electron Device Letters

Volumn 7, Issue 2, 1986, Pages 75-77

  Yang, Long ^a   Long, Stephen I ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS;

GALLIUM ARSENIDE MESFET; SOURCE/DRAW RESISTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0022665492     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26299     Document Type: Article

References (6)

1. P. L. Hower and N. G. Bechtel, “Current saturation and small-signal characteristics of GaAs FET's,” IEEE Trans. Electron Devices, vol. ED-20, pp. 213–220, Mar. 1973.
2. H. Fukui, “Determination of the basic devices parameters of a GaAs MESFET,” Bell. Syst. Tech. J., pp. 711–797, Mar. 1979.
3. K. Lee, K. W. Lee, M. Shur, T. Vu, P. Roberts, and M. Helix, “Source, drain, and gate series resistance and electron saturation velocity in ion-implanted GaAs FETs,” IEEE Trans. Electron Devices, vol. ED-32, pp. 981–993, May 1985.
4. K. Lee, K. W. Lee, M. Shur, T. Vu, P. Roberts, and M. Helix, “New interpretation of ‘end’ resistance measurements,” IEEE Electron. Device Lett., vol. EDL-5, pp. 5–7, 1984.
5. S. Chaudhuri and M. Das, “On the determination of source and drain series resistances of MESFET's,” IEEE Electron Devices Lett., vol. EDL-5, pp. 244–246, July 1984.
6. P. Urien and D. Delagebeaudeuf, “New method for determining the series resistance in a MESFET of FEGFET,” Electron. Lett., vol. 19, no. 17, pp. 702–703, Aug. 1983.