Oxygen Precipitation in Heavily Doped Silicon

Journal of the Electrochemical Society

Volumn 137, Issue 2, 1990, Pages 647-652

  Bains, S K ^a   Griffiths, D P ^a   Wilkes, J G ^a   Series, R W ^b   Barraclough, K G ^b  

^a Millbrook Industrial Estate ^*  (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES--PRECIPITATION;

CZOCHRALSKI SILICON; GAMMA ACTIVATION ANALYSIS; INTRINSIC GETTERING;

SEMICONDUCTING SILICON;

EID: 0025386127     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2086524     Document Type: Article

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