IMPROVEMENT OF SILICON SURFACE QUALITY BY H2 ANNEAL.

Conference on Solid State Devices and Materials

Volumn , Issue , 1986, Pages 529-532

  Matsushita, Y ^a   Wakatsuki, M ^a   Saito, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - DEFECTS;

SHORT TIME ANNEAL; SILICON WAFERS; STACKING FAULTS; SURFACE ACTIVE AREA; SURFACE QUALITY; WAFER SURFACES;

SEMICONDUCTING SILICON;

EID: 0022886738     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1986.b-8-4     Document Type: Conference Paper

References (8)