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Volumn 33, Issue 9, 1994, Pages L1198-L1201

A study of defect formation mechanism at edges of local oxidation of silicon structure

(4) Ishigami, Shun Ichiro a Shinyashiki, Hiroshi a Furuya, Hisashi a Shingyouji, Takayuki a

a MITSUBISHI MATERIALS CORPORATION (Japan)

Author keywords

Agglomeration; Dislocation loop; Elastic strain; Intrinsic gettering treatment; LOCOS; Oxygen concentration; Self interstitial; Tensile stress

Indexed keywords

AGGLOMERATION; CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); OXIDATION; STRAIN; STRESSES; SUBSTRATES;

DEFECT FORMATION PROCESSES; DISLOCATION LOOP; ELASTIC STRAIN; ELASTIC STRESS; INTRINSIC GETTERING TREATMENT; OXYGEN CONCENTRATION EFFECT; SELF INTERSTITIAL; TENSILE STRESS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0028513783 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.33.L1198 Document Type: Article

Times cited : (2)

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