New gettering using misfit dislocations in homoepitaxial wafers with heavily boron-doped silicon substrates

Applied Physics Letters

Volumn 54, Issue 5, 1989, Pages 463-465

  Kikuchi, H ^a   Kitakata, M ^a   Toyokawa, F ^a   Mikami, M ^a  

^a NEC CORPORATION   (Japan)

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EID: 0010007544     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.100953     Document Type: Article

References (9)